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Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates

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6 Author(s)
Chen, Y.-T. ; Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan ; Lan, H.-S. ; Hsu, W. ; Fu, Y.-C.
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Well-behaved Ge n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates with dispersion-free, high on/off ratio, and high peak mobility are demonstrated. The interface trap density is effectively reduced down to 5 × 1011 cm-2 eV-1 near midgap by GeO2 passivation using rapid thermal oxidation, resulting in high peak mobility of ∼1050 cm2/Vs. The fast roll-off of the mobility at high electric field is probably due to the large surface roughness scattering. By applying uniaxial 〈110〉 tensile strain (0.08%) on 〈110〉 channel direction, the best mobility enhancement (12%) can be achieved. The calculated strain responses with proper stress configurations are consistent with experimental results.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 2 )