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An ultra-wideband (UWB) low-noise amplifier (LNA) with simultaneous noise and distortion cancellation is presented. This LNA utilizes a pMOS in weak inversion for second- and third-order distortion cancellation. By using two inductors, the effective bandwidth for noise/distortion cancellation and input matching are extended. This LNA has been designed in a 0.18-μm CMOS process. The noise figure is 3.8-4.45 dB, IIP3 is 15-20 dBm, IIP2 is 10-16 dBm, and S11 is lower than -15 dB over 5.8-10.6 GHz. The voltage gain is 13.8 dB while drawing 8.3 mA from 1.8 V supply voltage.
Date of Conference: 17-19 May 2011