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Organic Programmable Resistance Memory Device Based on \hbox {Au/Alq}_{3}/\hbox {gold-nano\partic\le/Alq}_{3}/\hbox {Al} Structure

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9 Author(s)
Xin Liu ; Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China ; Zhuoyu Ji ; Liwei Shang ; Hong Wang
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In this letter, an organic memory cell based on tris(8-hydroxyquinolinato)aluminum doped with gold nanoparticles is reported. The device can achieve good resistive switching properties, such as a high on/off current ratio of about 104, and good retention (4 h at 0.1 V). The device remains in either state even after the power has been turned off and shows a good stability under stress test. The current-voltage characteristics are comprehensively investigated, and a possible mechanism is proposed and well fitted with the experiment data. The results show that the organic memory devices have promising potentials for future flexible electronic systems.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 8 )