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Before being used in an extreme-ultraviolet (EUV) scanner, photoresists must first be evaluated for sensitivity and tested to ensure that they will not contaminate the scanner optics. The new NIST facility described here provides data on the contamination potential of the outgas products of a candidate resist by simultaneously irradiating a multilayer optic and a nearby resist-coated wafer with EUV radiation. The facility can also be used without changing its configuration to provide accurate resist dose-to-clear measurements. Detailed, real-time information on the rate of contamination growth is given by a unique, in situ imaging ellipsometer. We will describe the optical layout, mechanical design, and capabilities of the beamline, finally presenting experimental examples of its capabilities.