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New generation of distributed Bragg reflectors based on BAlN/AlN structures for deep UV-optoelectronic applications

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15 Author(s)
Abid, M. ; GT-Lorraine, Georgia Inst. of Technol., Metz, France ; Moudakir, T. ; Gautier, S. ; Orsal, G.
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We report innovative highly reflective DBR structures based on the novel material BAIN. An experimental BAIN/AIN DBRs demonstrated a reflectivity of 60% and 82% at wavelengths of 282 nm and 311nm respectively.

Published in:

Lasers and Electro-Optics (CLEO), 2011 Conference on

Date of Conference:

1-6 May 2011