A germanium-on-silicon laser for on-chip applications

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Lasing from Ge was achieved by highly n-type doping and biaxially tensile strain to overcome free carrier absorption. High n-type doping and efficient carrier injection remain the most important issues for electrical excitation of lasing.

Published in:
Lasers and Electro-Optics (CLEO), 2011 Conference on

Date of Conference: 1-6 May 2011

Page(s):: 1 - 2
Print ISBN:: 978-1-4577-1223-4
INSPEC Accession Number:: 12119423

Conference Location :: Baltimore, MD

Author(s)

Michel, J.
Massachusetts Inst. of Technol., Cambridge, MA, USA
Jifeng Liu ; Kimerling, L.C. ; Camacho-Aguilera, R. ; Bessette, J.T. ; Yan Cai

INSPEC: CONTROLLED INDEXING

elemental semiconductors

germanium

laser beam applications

silicon

INSPEC: NON CONTROLLED INDEXING

biaxially tensile strain

electrical excitation

germanium-on-silicon laser

n-type doping

on-chip applications

IEEE TERMS

Doping

Laser excitation

Laser modes

Photonics

Pump lasers

Semiconductor lasers

Silicon

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