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Excess noise in GaAs avalanche photodiodes with thin multiplication regions

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4 Author(s)
Hu, C. ; Dept. of Electr. Eng., Texas Univ., Austin, TX, USA ; Anselm, K.A. ; Streetman, B.G. ; Campbell, J.C.

It is well known that the gain-bandwidth product of an avalanche photodiode can be increased by utilizing a thin multiplication region. Previously, measurements of the excess noise factor of InP-InGaAsP-InGaAs avalanche photodiodes with separate absorption and multiplication regions indicated that this approach could also be employed to reduce the multiplication noise. This paper presents a systematic study of the noise characteristics of GaAs homojunction avalanche photodiodes with different multiplication layer thicknesses. It is demonstrated that there is a definite “size effect” for multiplication regions less than approximately 0.5 μm. A good fit to the experimental data has been achieved using a discrete, nonlocalized model for the impact ionization process

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Quantum Electronics, IEEE Journal of  (Volume:33 ,  Issue: 7 )