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Modelling DC characteristics of GaAs MESFET devices using a simple and accurate analytic tool

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2 Author(s)
Ibrahim, S.A. ; Fac. of Electron. Eng., Menofia Univ., Egypt ; El-Rabaie, S.

A simple equation that relates the drain current to the gate and source voltages of GaAs MESFET devices is presented. The proposed equation covers the entire Ids/Vds characteristics with no limitations. The parameters of the equation are evaluated easily using simple analytic tools without optimisation. Results show that the proposed formula gives accurate fitting results compared with the most popular used formula (the Curtice equation). Typical CPU times for evaluating the modelling parameters for a NEC71000 device using the two models are in the ratio of 1:50.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 22 )