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An actively balanced GaAs HBT-Schottky mixer for 3-V wireless applications

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6 Author(s)
Kobayashi, K.W. ; TRW Electron. Syst. & Technol. Div., Redondo Beach, CA, USA ; Tran, L.T. ; Oki, A.K. ; Lammert, M.
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Here we present a novel low-voltage active mixer topology which enables 3-V double-balanced active mixer operation from wide-bandgap GaAs-based heterojunction bipolar transistors (HBTs). The compact mixer design integrates directly coupled active radio frequency (RF) and local oscillator (LO) transformer baluns with a Schottky-diode ring-quad to form a double-balanced mixer which operates from DC to 5 GHz. Biased with a low 3-V supply and operated as a down-converter with a fixed LO at 800 MHz and 0 dBm, the mixer achieves 9.4-dB conversion gain (CG) at 1 GHz with positive CG out to 4 GHz and an IP3 of -5 dBm. The LO-IF isolation is >20 dB while the 2-2 spur suppression is >20 dB over a broad 1-5 GHz RF input band. The novel 2.1·VBE supply design topology allows 3-V operation from the high turn-on voltage GaAs HBT's, making them suitable for portable wireless applications, and can enable 1.5-V operation for Si, Si-Ge, and InP BJT/HBT technologies

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:7 ,  Issue: 7 )