By Topic

1.58-GHz Third-Order CMOS Active Bandpass Filter With Improved Passband Flatness

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Meng-Lin Lee ; Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Hsien-Shun Wu ; Tzuang, C.-K.C.

This paper presents a third-order active bandpass filter (BPF), realized in an area of 0.58% λ0 by 0.44% λ0 at 1.58 GHz (not including contact pads and λ0 is the free-space wavelength at 1.58 GHz) using standard 0.18-μm CMOS one-poly six-metal technology. A survey of the literature shows that a prototype of such a BPF has the lowest normalized area per resonator of active BPFs. The synthetic transmission line, which is used in the active BPF herein, enables the prototype to be substantially miniaturized. Moreover, this paper describes a modified composite cross-coupled nMOS resonator that can equalize passband ripples. A comparison between the measured and simulated data verifies the third-order filter response with 8% 3-dB bandwidth at 1.58 GHz. The insertion loss is 0.68 dB at the central frequency with a passband ripple of 1.24 dB and the active BPF consumes 8 mA from a 1.8-V supply.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:59 ,  Issue: 9 )