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An injection-locked frequency divider (ILFD) which operates in F-band (90 ~ 140 GHz) is proposed. The proposed ILFD using a triple-split-inductor technique achieves a high oscillation frequency. The ILFD is fabricated in a 65 nm CMOS process. The measured locking range is 113.92-to-118.08 GHz. It consumes 8.4 mW from a 1.2 V power supply without biasing circuit and buffers and the core circuits occupies 0.32 × 0.25 mm2.