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GaAs MESFETs have been fabricated on a silicon substrate using a molecular beam epitaxy grown film detached from its growth substrate and attached on a silicon substrate covered with a dielectric. The device processing is done on the silicon substrate. The MESFETs exhibit IDSS=130 mA/mm, gm=135 mS/mm and for 1.3 mu m gate length unity current gain cut-off frequency fT of 12 GHz. Excellent device isolation with subpicoampere leakage currents is obtained.