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DC and RF performance of GaAs MESFET fabricated on silicon substrate using epitaxial lift-off technique

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6 Author(s)
Shah, D.M. ; Dept. of Electr. Eng., New Jersey Inst. of Technol., Newark, NJ, USA ; Chan, W.K. ; Gmitter, T.J. ; Florez, L.T.
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GaAs MESFETs have been fabricated on a silicon substrate using a molecular beam epitaxy grown film detached from its growth substrate and attached on a silicon substrate covered with a dielectric. The device processing is done on the silicon substrate. The MESFETs exhibit IDSS=130 mA/mm, gm=135 mS/mm and for 1.3 mu m gate length unity current gain cut-off frequency fT of 12 GHz. Excellent device isolation with subpicoampere leakage currents is obtained.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 22 )