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An On-Chip Electromagnetic Bandgap Structure using an On-Chip Inductor and a MOS Capacitor

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6 Author(s)
Chulsoon Hwang ; Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea ; Yujeong Shim ; Kyoungchoul Koo ; Myunghoi Kim
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An on-chip electromagnetic bandgap (EBG) structure using a CMOS process is proposed. The proposed structure is the first EBG structure devised to suppress simultaneous switching noise coupling in an on-chip power distribution network (PDN). The on-chip EBG structure utilizes an on-chip inductor and a MOS capacitor to generate a stopband with a range of several GHz in an extremely small size; thus, the EBG structure can be embedded in on-chip PDNs. The proposed on-chip EBG structure was fabricated using a MagnaChip 0.18 μm CMOS process, and we successfully verified a 9.24 GHz stopband, from 1.26 to 10.5 GHz, with an isolation level of 50 dB.

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Microwave and Wireless Components Letters, IEEE  (Volume:21 ,  Issue: 8 )