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High-Frequency Extraction of the Extrinsic Capacitances for GaN HEMT Technology

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8 Author(s)
Giovanni Crupi ; DFMIE, University of Messina, Messina, Italy ; Dominique M. M. -P. Schreurs ; Alina Caddemi ; Antonio Raffo
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A novel extraction methodology is proposed to distinguish between the extrinsic and intrinsic capacitances of wide GaN HEMTs. This approach is based on the experimental observation that the real parts of the impedance parameters of such devices increase at high-frequency. The mathematical analysis clearly shows that this so far uninvestigated behavior can be attributed to the extrinsic capacitances.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:21 ,  Issue: 8 )