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Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap Memories

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6 Author(s)
Salvatore Maria Amoroso ; Dipartimento di Elettronica e Informazione, Politecnico di Milano, Milano, Italy ; Christian Monzio Compagnoni ; Aurelio Mauri ; Alessandro Maconi
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We present a detailed semi-analytical investigation of the transient dynamics of gate-all-around (GAA) charge-trap memories. To this aim, the Poisson equation is solved in cylindrical coordinates, and a modification of the well-known Fowler-Nordheim formula is proposed for tunneling through cylindrical dielectric layers. Analytical results are validated by experimental data on devices with different gate stack compositions, considering a quite extended range of gate biases and times. Finally, the model is used for a parametric analysis of the GAA cell, highlighting the effect of device curvature on both program/erase and retention.

Published in:

IEEE Transactions on Electron Devices  (Volume:58 ,  Issue: 9 )