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Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge

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15 Author(s)
B. H. Hong ; Research Center for Time-Domain Nano-functional Devices and the School of Electrical Engineering, Korea University, Seoul, Korea ; N. Cho ; S. J. Lee ; Y. S. Yu
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We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing (SS) degradation. A simple electrostatic argument showed that the GAA device had smaller degradation of SS values than planar devices for the same interface trap densities.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 9 )