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Advantage of high-density plasma nitridation for improving thermal stability of ultrathin GeO2 on Ge(100)

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6 Author(s)
Kasuya, A. ; Dept. of Mater. & Life Sci., Osaka Univ., Suita, Japan ; Kutsuki, K. ; Hideshima, I. ; Hosoi, T.
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We have investigated the thermal stability of ultrathin germanium oxynitride (GeON) gate dielectrics fabricated by plasma nitridation of ultrathin thermal oxide (GeO2). Thermal treatment up to 520°C effectively improved the electrical properties of the ultrathin GeON dielectrics, such as reduced bulk and interface defects.

Published in:

Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for Future of

Date of Conference:

19-20 May 2011