By Topic

Advantage of high-density plasma nitridation for improving thermal stability of ultrathin GeO2 on Ge(100)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
A. Kasuya ; Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, 565-0871, Japan ; K. Kutsuki ; I. Hideshima ; T. Hosoi
more authors

We have investigated the thermal stability of ultrathin germanium oxynitride (GeON) gate dielectrics fabricated by plasma nitridation of ultrathin thermal oxide (GeO2). Thermal treatment up to 520°C effectively improved the electrical properties of the ultrathin GeON dielectrics, such as reduced bulk and interface defects.

Published in:

Future of Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for

Date of Conference:

19-20 May 2011