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Effects of the band structure parameters on the subband energies and the electron mobility in 4H-SiC inversion layers are studied theoretically. The bulk band structure of 4H-SiC is calculated using a first-principles pseudopotential method, and then electron effective masses in the two lowest conduction bands are obtained, which are used in the self-consistent calculation of the electronic states at the SiC/SiO2 interface. It is shown that the higher-energy valley affects the mobility particularly under strong confinement condition, depending on the surface orientations.
Date of Conference: 19-20 May 2011