By Topic

Effect of higher conduction band on electron mobility in 4H-SiC inversion layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Watanabe, R. ; Div. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita, Japan ; Kamakura, Yoshinari ; Taniguchi, K.

Effects of the band structure parameters on the subband energies and the electron mobility in 4H-SiC inversion layers are studied theoretically. The bulk band structure of 4H-SiC is calculated using a first-principles pseudopotential method, and then electron effective masses in the two lowest conduction bands are obtained, which are used in the self-consistent calculation of the electronic states at the SiC/SiO2 interface. It is shown that the higher-energy valley affects the mobility particularly under strong confinement condition, depending on the surface orientations.

Published in:

Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for Future of

Date of Conference:

19-20 May 2011