Referenced Items are not available for this document.
We demonstrate the fabrication of high-quality fully relaxed SiGe layers on a silicon-on-insulator (SOI) substrate by rapid melt growth. A compositional gradient and crystallographic defects are confined to a region between the relaxed SiGe and residual SOI layers. The degradation of surface roughness during rapid thermal annealing is suppressed by the capping SiO2 layer.
Published in:
Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for Future of
Date of Conference: 19-20 May 2011
- Page(s):
- 70 - 71
- E-ISBN :
- 978-1-61284-147-2
- Print ISBN:
- 978-1-61284-145-8
- INSPEC Accession Number:
- 12097000
- Conference Location :
- Osaka
- Digital Object Identifier :
- 10.1109/IMFEDK.2011.5944849
- Product Type:
- Conference Publications
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