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We investigate the characterization of thin film devices using double-layered polycrystalline silicon (poly-Si) films formed by green laser annealing. The simultaneous crystallization of the double-layered substrate was achieved. The crystalline quality of the upper poly-Si layer is slightly higher than that of the single-layered poly-Si films. Thin film transistors (TFTs) and thin film photo diodes (TFPDs) have been fabricated on the double-layered poly-Si films. TFTs and TFPDs show device operation.