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Thin film transistors and photo diodes fabricated on double-layered polycrystalline silicon films formed by green laser annealing

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5 Author(s)
Yamasaki, K. ; Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan ; Machida, E. ; Horita, M. ; Ishikawa, Y.
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We investigate the characterization of thin film devices using double-layered polycrystalline silicon (poly-Si) films formed by green laser annealing. The simultaneous crystallization of the double-layered substrate was achieved. The crystalline quality of the upper poly-Si layer is slightly higher than that of the single-layered poly-Si films. Thin film transistors (TFTs) and thin film photo diodes (TFPDs) have been fabricated on the double-layered poly-Si films. TFTs and TFPDs show device operation.

Published in:

Electron Devices, Kansai, (IMFEDK), 2011 International Meeting for Future of

Date of Conference:

19-20 May 2011