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A new Z-source inverter topology to improve voltage boost ability

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3 Author(s)
Trinh, Quoc-Nam ; Electr. Dept., Univ. of Ulsan, Ulsan, South Korea ; Hong-Hee Lee ; Tae-Won Chun

In this paper, a new Z-source inverter (ZSI) topology is developed to improve a voltage boost ability of ZSI. Some more inductors and diodes are added into the impedance network of the conventional ZSI. The modulation methods that have been developed in the conventional ZSI can be easily utilized in the proposed ZSI. The voltage boost ratio becomes much higher compared with the conventional ZSI under the same shoot-through duty ratio. In addition, the proposed ZSI can reduce the voltage stress on Z-source capacitor and inverter-bridge significantly because a smaller shoot-through duty ratio is required for high voltage boost ratio. Theoretical analysis of the proposed topology is investigated and the improved performances are validated by both simulation study and experimental results.

Published in:

Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on

Date of Conference:

May 30 2011-June 3 2011

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