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New memories, such as non-volatile resistive memories present bright prospect in catering to the ever-growing memory needs. In this paper, we investigate the usage of Oxide Resistive Random Access Memory (OxRRAM) to improve the communication switchboxes of Field-Programmable-Gate-Arrays (FPGAs). We prove the interest of using unipolar OxRRAM in such devices thanks to a complete methodology, starting from compact model based on self-consistent physical model up to architectural evaluation using typical FPGA benchmarks. Besides, the architectural gains in terms of area by 1.4× and write time by 17.4× in comparison with phase-change memories (PCM). An improvement in area by 4.82× and write time by 285.7× for conventional Flash technology as well as a reduction in overall delay by 49.3% due to the reduced on-resistance and smaller size are reported.