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Analysis of STT-RAM cell design with multiple MTJs per access

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6 Author(s)
Park, H. ; Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA ; Dorrance, R. ; Amin, A. ; Fengbo Ren
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Density of STT-RAMs is limited by the area cost and width of the access device in a cell since it needs to support the programming currents. This paper explores a cell structure that shares each cell's access transistor with multiple MTJ memory elements. Feasibility and limitations of such a cell structure is explored for both reading and writing of the memory. The analytical and simulation results indicate that only small amount of sharing is possible and having MTJs that can handle a high read current without disturbing the cell is needed.

Published in:

Nanoscale Architectures (NANOARCH), 2011 IEEE/ACM International Symposium on

Date of Conference:

8-9 June 2011