By Topic

Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal–2DEG Tunnel Junction Field Effect Transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Li Yuan ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Hongwei Chen ; Qi Zhou ; Chunhua Zhou
more authors

The Schottky-source forward current-voltage characteristics were measured and analyzed in a recently reported AlGaN/GaN metal-2-D-electron-gas tunnel junction field-effect transistor (FET) (TJ-FET) in order to characterize the effective Schottky barrier height (SBH) and its gate bias dependence. The SBHs were extracted and found to be gate bias dependent, varying from 0.57 eV at VGS = -0.5 V to 0.3 eV at VGS = 1 V. This gate-induced Schottky barrier lowering (SBL) effect is explained by the image-charge effect. A 2-D device simulation is carried out to analyze the SBL effect and is shown to be in good agreement with the experiment results. The larger SBH at lower gate voltage enables off -state blocking, while the lower SBH at higher gate voltage leads to high on -state current driving capability in the AlGaN/GaN TJ-FETs.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 9 )