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94GHz power-combining power amplifier with +13dBm saturated output power in 65nm CMOS

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6 Author(s)
Dan Sandström ; Aalto University, Department of Micro and Nanosciences/SMARAD-2, Espoo, Finland ; Baudouin Martineau ; Mikko Varonen ; Mikko Kärkkäinen
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A power combining power amplifier utilizing cascode topology and transformer-based matching elements is presented in this paper. The amplifier achieves +13 dBm saturated output power at 94 GHz with a standard 1.2 V supply and occupies an active area of only 0.069 mm2. Amplifier is implemented in an industrial 65nm CMOS process taking into account reliability issues at high output power level. The amplifier is also ESD-protected at the input and at the output.

Published in:

2011 IEEE Radio Frequency Integrated Circuits Symposium

Date of Conference:

5-7 June 2011