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A 55–67GHz power amplifier with 13.6% PAE in 65 nm standard CMOS

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4 Author(s)
Tong Wang ; Toshiba Corporation, Saiwai-ku, Kawasaki 212-8582, Japan ; Toshiya Mitomo ; Naoko Ono ; Osamu Watanabe

A four-stage power amplifier (PA) covering 55-67GHz band is presented. The broadband performance is achieved owing to π-section interstage matching network. Three-stage-current-reuse topology is proposed to enhance efficiency. The amplifier has been fabricated in 65 nm digital CMOS. 18 dB power gain and 9.6 dBm saturated power (Psat) are achieved at 60GHz. The PA consumes current of 52 mA at 1.2 V supply voltage, and has a peak power-added efficiency (PAE) of 13.6%. To the best of the authors' knowledge, this work shows the highest PAE among the reported CMOS PAs with less-than-1.2 V supply voltage and covering the worldwide 9GHz millimeter-wave band.

Published in:

2011 IEEE Radio Frequency Integrated Circuits Symposium

Date of Conference:

5-7 June 2011