Referenced Items are not available for this document.
THz CMOS imagers integrated with hyperhemispherical Si-lenses are presented and characterized. FPAs are implemented in 65nm CMOS bulk and SOI technologies. Lens-integrated detectors at 0.65 THz show an increase of 15dB and 20dB in SNR compared to front-side illumination for SOI and bulk respectively. The responsivities Rv are increased and a minimum noise-equivalent power NEP of 17pW/√(Hz) is measured for SOI detectors with the lens. THz Images are presented.
Published in:
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Date of Conference: 5-7 June 2011
- Page(s):
- 1 - 4
- ISSN :
- 1529-2517
- E-ISBN :
- 978-1-4244-8291-7
- Print ISBN:
- 978-1-4244-8293-1
- INSPEC Accession Number:
- 12094947
- Conference Location :
- Baltimore, MD
- Digital Object Identifier :
- 10.1109/RFIC.2011.5940670
- Product Type:
- Conference Publications
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