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A CMOS distributed amplifier with active input balun using GBW and linearity enhancing techniques

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2 Author(s)
Jahanian, A. ; Univ. of California, Irvine, CA, USA ; Heydari, P.

A CMOS highly linear 818 GHz-GBW distributed amplifier (DA) with distributed active input balun is presented. Each gm cell within the DA employs dual-output 2-stage gm topology that improves gain and linearity without adversely affecting bandwidth and power. Fabricated in a 65 nm LP CMOS process, the 0.9 mm2 DA achieves 22 dB of gain and 10 dBm of P1dB while consuming 97 mW from a 1.3 V supply. A distributed balun using the same gm cell achieves >;70 GHz bandwidth and 4 dB gain with 19.5 mW power consumption from 1.3 V supply.

Published in:

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Date of Conference:

5-7 June 2011