Cart (Loading....) | Create Account
Close category search window
 

A fully-integrated K-band CMOS power amplifier with Psat of 23.8 dBm and PAE of 25.1 %

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kawano, Y. ; Fujitsu Ltd., Atsugi, Japan ; Mineyama, A. ; Suzuki, T. ; Sato, M.
more authors

A fully-integrated K-band differential power amplifier was designed in 65 nm CMOS. The power amplifier comprised of the 2-stage cascode configuration has the matching networks based on the transformer. To match the impedances, turn ratios of each transformer were designed to be 1:1 for the input stage, 2:1 for the inter stage, and 1:1.5 for the output stage, respectively. The saturation power of more than 20 dBm was obtained in the band between 16 GHz and 25 GHz. The peak value of the saturation power was 23.8 dBm, and the power added efficiency (PAE) was 25.1 % at 19 GHz. The chip occupied area including the DC and RF pads is 1.2 × 0.8 mm.

Published in:

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Date of Conference:

5-7 June 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.