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CVD and ALD of Cobalt-tungsten alloy film as a novel Copper diffusion barrier

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3 Author(s)
Hideharu Shimizu ; Taiyo Nippon Sanso corporation, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan ; Kaoru Sakoda ; Yukihiro Shimogaki

To reduce resistivity of interconnect, to enhance electromigration life time, and to improve a step coverage of barrier layer, cobalt and cobalt-tungsten alloy film was deposited by chemical vapor deposition (CVD) or atomic layer deposition (ALD) using octacarbonyl dicobalt (Co2(CO)8) and biscyclopentadienyl cobalt (Cp2Co) as precursors, respectively. We demonstrated to form conformal cobalt films on to trench pattern and we confirmed that CVD/ALD cobalt-tungsten films have good barrier properties against copper diffusion.

Published in:

2011 IEEE International Interconnect Technology Conference

Date of Conference:

8-12 May 2011