By Topic

High-performance metal hard mask process using novel TiN film for 32-nm node Cu interconnect and beyond

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
Torazawa, N. ; Panasonic Corp., Semicond. Co., Uozu, Japan ; Hinomura, T. ; Harada, T. ; Kabe, T.
more authors

One of the most challenging issues in the metal hard mask (MHM) process is controlling the residual stress in TiN mask. This becomes more important as the feature sizes of trenches and vias continue to shrink and the low k-value dielectrics are introduced to Cu interconnect. It is found that the deformation of trenches due to the residual stress in TiN results in Cu voids forming. To overcome this problem, the correlation between the residual stress and the film property of TiN has been investigated. The residual stress in TiN is found to strongly correlate with both the grain size and the crystal structure of TiN, and low residual stress in TiN is accomplished by suppressing the grain growth of TiN. By applying TiN that has a quite fine needle-like structure, the trench deformation can be suppressed and thus the gap filling is perfectly achieved. The MHM process using TiN film that has a needle-like structure is a promising technology for 32-nm node Cu interconnect and beyond.

Published in:

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Date of Conference:

8-12 May 2011