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Impact of through-silicon-via scaling on the wirelength distribution of current and future 3D ICs

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2 Author(s)
Dae Hyun Kim ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Sung Kyu Lim

In this paper, we investigate the impact of TSV scaling on the wirelength distribution of the 3D ICs. This investigation includes wirelength distribution prediction of 3D ICs for current/future process/TSV technologies, studies on the impact of the design granularity at each process node, the impact of the die count, and the impact of TSV area constraint, and cross-comparison among various 2D and 3D technologies.

Published in:
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Date of Conference: 8-12 May 2011

Page(s):
1 - 3
ISSN :
pending
Print ISBN:
978-1-4577-0503-8
INSPEC Accession Number:
12095058
Conference Location :
Dresden
Digital Object Identifier :
10.1109/IITC.2011.5940324
Product Type:
Conference Publications

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