Cart (Loading....) | Create Account
Close category search window
 

Process and RF modelling of TSV last approach for 3D RF interposer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

15 Author(s)

In this paper, high density TSV integration in silicon interposer is presented, fully characterized and simulated (DC and RF). Parasitic elements of the RF model are extracted. Dielectric and metal process improvements are developed and their impact on TSV RF behaviour is evaluated. At least, silicon resistivity effect on TSV RF performances is demonstrated.

Published in:

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Date of Conference:

8-12 May 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.