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Process and RF modelling of TSV last approach for 3D RF interposer

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15 Author(s)
C. Fuchs ; CEA-LETI Minatec, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France ; J. Charbonnier ; S. Cheramy ; L. Cadix
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In this paper, high density TSV integration in silicon interposer is presented, fully characterized and simulated (DC and RF). Parasitic elements of the RF model are extracted. Dielectric and metal process improvements are developed and their impact on TSV RF behaviour is evaluated. At least, silicon resistivity effect on TSV RF performances is demonstrated.

Published in:

2011 IEEE International Interconnect Technology Conference

Date of Conference:

8-12 May 2011