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ZrBO dielectrics for TSV production process

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6 Author(s)
Hatanaka, M. ; Inst. of Semicond. & Electron. Technol., ULVAC, Inc., Shizuoka, Japan ; Shibata, A. ; Harada, M. ; Toyoda, S.
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Dielectric films of ZrBO were grown using thermal-CVD Zr(BH4)4-O2 gas system. Oxygen gas was activated by microwave to produce its radical. The grown film showed high barrier properties for Cu diffusion with a thickness of 50 nm. Typical side step coverage was over 60% for a 45-μm-deep and 7.5-aspect-ratio TSV with a high coverage of 67% at the bottom. We report ZrBO-CVD mechanism related to the coverage.

Published in:

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Date of Conference:

8-12 May 2011