By Topic

Orthotropic stress field induced by TSV and its impact on device performance

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
Hsieh, C.C. ; R&D, Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan ; Teng, H.A. ; Jeng, S.P. ; Jan, S.B.
more authors

An orthotropic stress field was observed in the vicinity of the Cu-filled TSV on nominal (100) silicon substrate from both μRaman measured data and validated FEM result. The orthotropic elastic behavior of silicon in the (100) plane is believed to be the reason. The FEM model was further validated by the comparison with the measured electrical data, and used to predict the device performance shift under the influence of the TSV-induced stress. The performance shift pattern also showed an orthotropic pattern. This finding has profound implication on 3D silicon stacking design rule and system integration.

Published in:

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Date of Conference:

8-12 May 2011