Referenced Items are not available for this document.
The thermal and spatial variation of Cu TSV-induced stress has been investigated for 1×4 arrays of 5 μm diameter × 50 μm TSVs using microRaman imaging. Following post-CMP annealing the measured Si Raman shift outside the TSV array is slightly modified. In strong contrast, the Si Raman shift midway between TSVs transitions from a tensile to compressive state as the annealing temperature increases. Topographic analysis implies this shift is associated with thermally-induced Cu extrusion.
Published in:
Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International
Date of Conference: 8-12 May 2011
- Page(s):
- 1 - 3
- ISSN :
- pending
- Print ISBN:
- 978-1-4577-0503-8
- INSPEC Accession Number:
- 12095010
- Conference Location :
- Dresden
- Digital Object Identifier :
- 10.1109/IITC.2011.5940275
- Product Type:
- Conference Publications
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