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Thermal and spatial dependence of TSV-induced stress in Si

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5 Author(s)
McDonough, C. ; Coll. of Nanoscale Sci. & Eng., Univ. at Albany, Albany, NY, USA ; Backes, B. ; Wang, W. ; Caramto, R.
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The thermal and spatial variation of Cu TSV-induced stress has been investigated for 1×4 arrays of 5 μm diameter × 50 μm TSVs using microRaman imaging. Following post-CMP annealing the measured Si Raman shift outside the TSV array is slightly modified. In strong contrast, the Si Raman shift midway between TSVs transitions from a tensile to compressive state as the annealing temperature increases. Topographic analysis implies this shift is associated with thermally-induced Cu extrusion.

Published in:

Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International

Date of Conference:

8-12 May 2011