By Topic

An experimental 512-bit nonvolatile memory with ferroelectric storage cell

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Evans, J.T. ; Krysalis Corp., Albuquerque, NM, USA ; Womack, R.

An experimental 512-b random-access memory based on ferroelectric-capacitor storage cells has been successfully fabricated and tested. The device was designed solely for use in process development and electrical characterization and includes onboard test circuitry for that purpose. The internal timing of the memory is controlled externally to allow experimentation with timing algorithms, hence the name 512 externally controlled device, or 512 ECD. The authors discuss the properties of the ferroelectric ceramics used in integrated circuit memories, the operation of a destructively read ferroelectric memory cell, and the organization of the 512 ECD die, including its onboard test circuitry. Finally, retention and wear-out properties of ferroelectric capacitors are discussed as they relate to design requirements

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:23 ,  Issue: 5 )