By Topic

A nanopower CMOS bandgap reference with 30ppm/degree C from −30 degree C to 150 degree C

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Pengpeng Yuan ; Instn. of Microelectron., Tsinghua Univ., Beijing, China ; ZhiHua Wang ; DongMei Li ; Wang, A.
more authors

A nanopower subthreshold bandgap reference with 30ppm/°C from -30°C to 150°C has been implemented in 0.18μm CMOS. This design is based on weighted ΔVGS and is free of resistors. The major advantage of this design is that with nanopower consumption, the temperature range is extremely wide. To achieve high performance of subthreshold bandgap operating in high temperature (above 80°C), a leakage current elimination technique which enables subthreshold bandgap operate properly until 150°C was proposed. Such modification does not require additional die area and power consumption. This topology can also generate multiple reference voltages whose values are integer times of the minimum reference voltage. The line regulation of the reference voltage is 0.677mV/V when the supply voltage is increased from 1 V to 2.5 V. The core circuit consumes 46nW at IV at room temperature. The active area occupies 0.0036mm2.

Published in:

Circuits and Systems (ISCAS), 2011 IEEE International Symposium on

Date of Conference:

15-18 May 2011