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Binary Access Memory: An optimized lookup table for successive approximation applications

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5 Author(s)
Benjamin Hershberg ; School of Electrical Engineering and Computer Science, Oregon State University, USA ; Skyler Weaver ; Seiji Takeuchi ; Koichi Hamashita
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An optimized memory structure, Binary Access Memory (BAM), is presented for successive approximation applications that employ an error correction lookup table. Unlike true random-access memory, the probability of different codes occurring in a binary successive approximation access pattern is not uniformly distributed. BAM exploits this fact in several ways to reduce the number of sub-block switches, the average and worst-case access latency, and power consumption compared to a conventional SRAM lookup table. A simple technique for using BAM in an asynchronous successive approximation design is also presented.

Published in:

2011 IEEE International Symposium of Circuits and Systems (ISCAS)

Date of Conference:

15-18 May 2011