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In this study, the authors present the designs and experimental results of radio frequency (RF) micro electro-mechanical systems (MEMS) switches and switching circuits for gallium arsenide (GaAs)-based monolithic microwave-integrated circuits (MMIC). The switches and switching networks [single-pole single throw (SPST), single-pole double throw and double-pole double throw] are fabricated using OMMIC's GaAs MMIC foundry process technology. Measured results for a wide-band SPST switch design show isolation better than 20 dB up to 80 GHz with impedance matching better than -15 dB and insertion loss below 1.6 dB. Such low-loss GaAs-based RF MEMS switches are also capable of sustaining a power level of more than 10 W (up to 41 dBm) at 1 and 4 GHz, respectively, during cold-switching cycling conditions. Finally, to highlight the possibilities and benefits of monolithic integration of such MEMS switches and active RF devices on the same GaAs substrate, we present the experimental results of a wide-band (i.e. more than 10-40 GHz) GaAs MEMS-enabled switched low-noise amplifier circuit.