By Topic

Through-Oxide-Via-Induced Back-Gate Effect in 3-D Integrated FDSOI Devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Trivedi, A.R. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Mukhopadhyay, S.

This letter studies the interaction of the potential of through-oxide-via (TOV) and the electrical behavior of neighboring transistors in a 3-D stack of fully depleted silicon-on-insulator (FDSOI) devices. Using device simulation, we show that the back-gate electric field of FDSOI devices can be significantly modulated by the potential of TOVs placed in close proximity. Consequently, the change in the TOV potential results in appreciable variation in the threshold voltage and the leakage current of neighboring FDSOI devices.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 8 )