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Browse Journals & Magazines > Applied Physics Letters ...> Volume:98 Issue:26 Help

The metallic interface between the two band insulators LaGaO3 and SrTiO3

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3 Author(s)
Nazir, S. ; Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia ; Singh, N. ; Schwingenschlogl, U.

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The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory. Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

Published in:
Applied Physics Letters  (Volume:98 ,  Issue: 26 )

Date of Publication: Jun 2011

Page(s):
262104 - 262104-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3604020
Product Type:
Journals & Magazines
Date of Current Version :
30 June 2011
Issue Date :
Jun 2011

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