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Stimulated emission of near-infrared radiation in silicon fin light-emitting diode

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7 Author(s)
Saito, S. ; Institute for Photonics-Electronics Convergence System Technology (PECST), Tokyo 185-8601, Japan ; Takahama, T. ; Tani, K. ; Takahashi, M.
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We propose top-down processes to make silicon multiple quantum wells called fins for a light-emitting diode. The silicon fins are formed vertically to a substrate and embedded in a Si3N4 waveguide. By current injections into silicon fins, we have observed stimulated emission spectra peaked at the wavelengths corresponding to the periodic structures of fins. The near-field mode profiles obtained at the edge of the waveguide qualitatively agreed with theoretical calculations. It has been turned out that both transverse-electric and transverse-magnetic fields can contribute to the optical gain.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 26 )