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We propose a bilateral switching poly-Si junction device to realize a crossbar array with a perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM). An N+ /P/N+ bilateral junction device with two bias terminals provides bidirectional current flow enough to write STT MRAM by a drain induced barrier lowering under a reverse bias of N+/P. In addition, asymmetrical doping for two N+ terminals provides a high on-off ratio of 107 under read condition, which is acceptable for a crossbar array. From this work, it is expected that a bilateral poly-Si junction will be a promising switch device to achieve crossbar architecture with a perpendicular STT MRAM.