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A high performance monolithic In/sub 0.53/Ga/sub 0.47/As voltage-tunable transimpedance amplifier

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3 Author(s)
Lo, D.C.W. ; Dept. of Electr. Eng. & Mater. Sci., Univ. of Southern California, Los Angeles, CA, USA ; Chung, Y.K. ; Forrest, S.R.

The fabrication and performance of the first monolithically integrated In/sub 0.53/Ga/sub 0.47/As JFET voltage-tunable transimpedance amplifier for use in InP-based optoelectronic integrated circuits are reported. A narrow-gate transistor is used as an active feedback resistor. The two-stage voltage amplifier has a voltage gain of 10.7 and a bandwidth of 350 MHz. The closed-loop transimpedance of the amplifier is tunable from 10 to 24 k Omega by controlling the gate bias of the feedback transistor.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:2 ,  Issue: 9 )

Date of Publication:

Sept. 1990

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