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Flip-Chip Compatible Electroabsorption Modulator for up to 40 Gb/s, Integrated With 1.55 \mu{\rm m} DFB Laser and Spot-Size Expander

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6 Author(s)
Kreissl, J. ; Heinrich-Hertz-Inst., Fraunhofer-Inst. fur Nachrichtentechnik, Berlin, Germany ; Bornholdt, C. ; Gaertner, T. ; Moerl, L.
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An electroabsorption modulator (EAM) was integrated with a distributed feedback laser and a spot-size expander forming an electro-modulated laser (EML) device. The EMLs are based on the conventional InP/InGaAsP material system and are designed for flip-chip mounting. They rely on a buried heterostructure with Fe-doped blocking layers, and the EAM section is optically butt-joint-coupled. The performance of EMLs with two different EAM lengths is reported. 150 μm long EAM sections can be operated with an f3dB bandwidth of 25 GHz allowing an error-free large signal modulation at 25 Gb/s with a dynamic extinction ratio (ER) of 11 dB. With 100 μm long EAM sections, the f3dB bandwidth increases up to 33 GHz. Large signal modulation at 40 Gb/s is achieved with a dynamic ER of more than 8 dB. Transmission of 40 Gb/s over 2 km is demonstrated.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:47 ,  Issue: 7 )

Date of Publication:

July 2011

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