By Topic

Flip-Chip Compatible Electroabsorption Modulator for up to 40 Gb/s, Integrated With 1.55 \mu{\rm m} DFB Laser and Spot-Size Expander

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kreissl, J. ; Heinrich-Hertz-Inst., Fraunhofer-Inst. fur Nachrichtentechnik, Berlin, Germany ; Bornholdt, C. ; Gaertner, T. ; Moerl, L.
more authors

An electroabsorption modulator (EAM) was integrated with a distributed feedback laser and a spot-size expander forming an electro-modulated laser (EML) device. The EMLs are based on the conventional InP/InGaAsP material system and are designed for flip-chip mounting. They rely on a buried heterostructure with Fe-doped blocking layers, and the EAM section is optically butt-joint-coupled. The performance of EMLs with two different EAM lengths is reported. 150 μm long EAM sections can be operated with an f3dB bandwidth of 25 GHz allowing an error-free large signal modulation at 25 Gb/s with a dynamic extinction ratio (ER) of 11 dB. With 100 μm long EAM sections, the f3dB bandwidth increases up to 33 GHz. Large signal modulation at 40 Gb/s is achieved with a dynamic ER of more than 8 dB. Transmission of 40 Gb/s over 2 km is demonstrated.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:47 ,  Issue: 7 )