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Low-threshold proton-implanted 1.3-μm vertical-cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors

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9 Author(s)
Y. Qian ; Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA ; Z. H. Zhu ; Y. H. Lo ; D. L. Huffaker
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We demonstrate a new structure for long-wavelength (1.3-μm) vertical-cavity top-surface-emitting lasers using proton implantation for current confinement. Wafer bonded GaAs-AlAs Bragg mirrors and dielectric mirrors are used for bottom and top mirrors, respectively. The gain medium of the lasers consists of nine strain-compensated AlGaInAs quantum wells. A record low room temperature pulsed threshold current density of 1.13 kA/cm2 has been achieved for 15-μm diameter devices with a threshold current of 2 mA. The side-mode-suppression-ratio is greater than 35 dB.

Published in:

IEEE Photonics Technology Letters  (Volume:9 ,  Issue: 7 )