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Low threshold current MOVPE grown GaInAs-Al(Ga)InAs separate confinement heterostructure multiquantum well metal-clad ridge-waveguide lasers emitting at 1585 nm

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6 Author(s)
Stegmÿller, B. ; Siemens AG, Munchen, West Germany ; Gessner, R. ; Beschorner, M. ; Franz, G.
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GaInAs-Al(Ga)InAs separate confinement heterostructure (SCH) multiquantum-well (MQW) metal-clad ridge-waveguide (MCRW) laser diodes were successfully fabricated for the first time from layer structures grown by atmospheric pressure (AP) metalorganic vapor-phase epitaxy (MOVPE) on InP substrate without any use of phosphine. CW operation of 2.9- mu m-wide and 400- mu m-long MCRW laser diodes emitting at 1585 nm was demonstrated with a minimum threshold current of 38 mA.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:2 ,  Issue: 9 )

Date of Publication:

Sept. 1990

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