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RF-MEMS based tri-band GaN power amplifier

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5 Author(s)
R. Liu ; Electrical Engineering Department, K.U.Leuven, Arenberg 10, Leuven 3001, Belgium. Also with imec, Belgium ; D. Schreurs ; W. De Raedt ; F. Vanaverbeke
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An RF-MEMs based tri-band GaN power amplifier with state-of-the-art performance is presented. The active device is a low-cost GaN-on-Si transistor with a plastic package. A dedicated broadband output matching network is designed to provide the desired waveform at the device intrinsic level. The frequency reconfigurability is implemented with one RF-MEMS at the input stage. Measured results show a 45, 28 and 46% power added efficiency (PAE) for an output power of 5.6, 3.0 and 4.5 W at 1.4, 2.5 and 3.6 GHz, respectively. Furthermore, the power amplifier exhibits a high drain efficiency of more than 46% across 1.3-1.4 and 3.4-3.7 GHz whilst delivering an output power of more than 4.3 W.

Published in:

Electronics Letters  (Volume:47 ,  Issue: 13 )